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Electrical Characterization of Aluminum Nitride Films on Silicon Grown by Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

A. H. Khan
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
J. M. Meese
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
T. Stacy
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
E. M. Charlson
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
E. J. Charlson
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
G. Zhao
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
G. Popovici
Affiliation:
Nuclear Engineering, University of Missouri, Columbia, MO 65211.
M. A. Prelas
Affiliation:
Nuclear Engineering, University of Missouri, Columbia, MO 65211.
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Abstract

Aluminum nitride (AlN) films were grown on silicon (Si) substrates by chemical vapor deposition (CVD). The films were characterized by scanning electron microscopy (SEM) and x-ray diffraction (XRD). The refractive index of the AlN films was determined by ellipsometry. Current-voltage and current-temperature characteristics were performed on metal-AlN-p+ Si structures with Pt, Au and Al as metal electrodes. The characteristics showed that at high field and high temperature the carrier conduction mechanism in the film was dominated by Frenkel-Poole emission. The relative dielectric constant of the AlN films was estimated to be 9.66+0.3 from capacitance-voltage-frequency (C-V-f) measurements on Au-AlN-p+ Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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