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Effects of Hydrogen Atoms on Passivation and Growth of Microcrystalline Si

Published online by Cambridge University Press:  21 February 2011

Toshimichi Ito ,
Tatsuro Yasumatsu ,
Hirokuni Watabe ,
Motohiro Iwami  and
Akio Hiraki
Toshimichi Ito
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565, Japan
Tatsuro Yasumatsu
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565, Japan
Hirokuni Watabe
Affiliation:
Matsushita Electric Industrial Co. Ltd., Shiromi, Osaka, Osaka., Japan
Motohiro Iwami
Affiliation:
Research Institute for Surface Science, Faculty of Science, Okayama University, Okayama, Okayama., Japan
Akio Hiraki
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565, Japan
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Abstract

Effects of hydrogen atoms bonded to silicon atoms on microcrystalline surfaces in a μc-Si:H and anodized porous silicon have been investigated using infrared spectroscopic technique and a semi-empirical molecular-orbital calculation (AM1 method). Experimental results on thermal stability of the Si-H bonds and oxidation of H-covered Si can be explained consistently in terms of system total energies and heats of formation of various clusters constructed by 13–18 Si and 18–24 H atoms (with an additional 0 atom). Possible role of H on the growth of μ c-Si:H is discussed in relation to stable Si-H bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 205
Copyright
Copyright © Materials Research Society 1990

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