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Effects of HWCVD-deposited Seed Layers on Hydrogenated Microcrystalline Silicon Films on Glass Substrates

Published online by Cambridge University Press:  01 February 2011

Michael Musashi Adachi ,
Wing Fai Lydia Tse ,
Garnet Cluff ,
Karen L. Kavanagh  and
Karim S. Karim
Michael Musashi Adachi
Affiliation:
[email protected], Simon Fraser University, School of Engineering, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada, 604-825-2164
Wing Fai Lydia Tse
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
Garnet Cluff
Affiliation:
[email protected], Simon Fraser University, Department of Physics, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
Karen L. Kavanagh
Affiliation:
[email protected], Simon Fraser University, Department of Physics, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
Karim S. Karim
Affiliation:
[email protected], Simon Fraser University, School of Engineering Science, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
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Abstract

Microcrystalline silicon was deposited by hot-wire chemical vapor deposition (HWCVD) using a graphite filament with and without a thin 50 nm microcrystalline silicon seed layer. Increasing silane concentration diluted in H2 led to a decrease in crystalline fraction as well in a decrease in dark conductivity and photo-conductivity. In addition, films deposited with a seed layer were found to have higher dark conductivity and photo-conductivity than those without a seed layer but deposited at slower growth rates. However, Raman spectroscopy showed that use of a seed layer resulted in only a small increase in crystalline fraction at the surface of the films which had thicknesses between 250-400nm. TEM measurements confirmed the crystalline nature of deposited films showing average grain sizes of 25 nm.

Keywords

Sichemical vapor deposition (CVD) (deposition)crystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-05
Copyright
Copyright © Materials Research Society 2006

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