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The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon

Published online by Cambridge University Press:  28 February 2011

M. Stavola ,
K. M. Lee ,
J. C. Nabity ,
P. E. Freeland  and
L. C. Kimerling
M. Stavola
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. M. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. C. Nabity
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P. E. Freeland
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

ABSTRACT:

We have investigated the effect of stress upon the infrared absorption spectrum of the neutral charge state of the oxygen donor in silicon. Our results show that the central cell of the donor has C2ν, symmetry and that this anisotropy gives rise to a ground state wave function that is constructed from a single pair of conduction band valleys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 257
Copyright
Copyright © Materials Research Society 1985

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References

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