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Effect of Phosphorus Doping on the Young’s Modulus and Stress of Polysilicon Thin Films

Published online by Cambridge University Press:  20 January 2011

Elena Bassiachvili  and
Patricia Nieva
Elena Bassiachvili
Affiliation:
University of Waterloo, Waterloo, Ontario, Canada.
Patricia Nieva
Affiliation:
University of Waterloo, Waterloo, Ontario, Canada.
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Abstract

On-chip MEMS (Micro Electromechanical Systems) characterization devices have been used to extract the Young’s modulus and average stress of polysilicon doped with phosphorus using thermal diffusion from a spin-on-dopant source. A customized fabrication process was developed and the devices were fabricated and tested. Resonant and static deformation tests were performed using microbridges. Information gathered from these experiments was combined to extract the Young’s modulus and residual stress of the thin film. Several doping concentrations, from undoped to 2.99×1020 phosphorus atoms/cm3 (4.148×10-4 Ω/cm), have been studied and it has been concluded that the Young’s modulus of phosphorus doped polysilicon with a chemical phosphorus concentration of 1.96×1020 atoms/cm3 (4.572×10-4 Ω/cm) increases by approximately 50GPa and the average stress of polysilicon with a phosphorus concentration of 2.99×1020 atoms/cm3 (4.148×10-4 Ω/cm) becomes more tensile by approximately 63 MPa relative to undoped specimens.

Keywords

diffusiondopantSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s09-09
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Effect of phosphorus doping on stress in silicon and polycrystalline silicon. Murarka, S.P., Retajczyk, T.F. Jr. 4, April 1983, J. Appl. Phys., Vol. 54, pp. 2069–2072.CrossRefGoogle Scholar
2. Mechanical properties of phsophorus-doped polysilicon films. Lee, S.W., Cho, C.H., Kim, J.P., Park, S.J., Yi, S.W., Cho, D.I.. November 1998, Journal of the Korean Physical Society, Vol. 33, pp. 392–395.Google Scholar
3. Stress and thermal expansion of boron-doped silicon membranes on silicon substrates. Berry, B.S., Pritchet, W.C.. 4, July/August 1991, J. Vac. Sci. Technol. A, Vol. 9, pp. 2231–2234.CrossRefGoogle Scholar
4. Sze, S.M., VLSI Technology. New York: McGraw-Hill, 1988.Google Scholar
5. Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices. Bhushan, B., Li, X.. 1, January 1997, Journal of Material Research, Vol. 12, pp. 54–63.CrossRefGoogle Scholar
6. Measurement of Young’s modulus on microfabricated structures using a surface profiler. Tai, Y.C., Muller, R.. 1990. IEEE Xplore. pp. 147–152.Google Scholar
7. Elastic properties and representative volume element of polycrystalline silicon for MEMS. Cho, S.W., Chasiotis, I. 2007, Experimental Mechanics, Vol. 47, pp. 37–49 CrossRefGoogle Scholar
8. Relationship between resistivity and phosphorus concentration in silicon. Mousty, F., Ostoja, P., Passari, L. 10, October 1974, Journal of Applied Physics, Vol. 45, pp. 4576–4580.CrossRefGoogle Scholar
9. Measurement of Young’s modulus and internal stress in silicon microresonators using a resonant frequency technique. Zhang, L.M., Uttamchandani, D., Culshaw, B., Dobson, P. 1990, Measurement Science Technology, Vol. 1, pp. 1343–1346.CrossRefGoogle Scholar
10. Lattice parameter study of silicon uniformly doped with boron and phosphorus. Celotti, G., Nobili, D., Ostoja, P. 1974, Journal of Materials Science, Vol. 9, pp. 821–828 CrossRefGoogle Scholar