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Effect of Highly Strained Superlattices on the Threading Dislocation Behavior in GaAs Grown on Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
GaAs films grown on silicon substrates suffer from a high density of threading dislocations. One technique to reduce these dislocations is the use of strained layered superlattices (SLS) InGaAs-GaAsP as buffer. We found that the effectiveness and interactions of the SLS with the threading dislocations strongly depend on the dislocation type and the strain field of the superlattices. Because of the high dislocation density in GaAs/Si, the SLS acts as a medium for dislocation interactions and annihilations. Highly strained SLS (∼ 2%) is required to bend the dislocations and keep them bent at the strained interfaces. We found that the combination between annealing and a highly strained superlattice coupled with selective epitaxy is an effective approach to reduce the threading dislocations in GaAs grown on Si. Transmission electron microscopy is used to study these effects.
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- Copyright © Materials Research Society 1989