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Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE

Published online by Cambridge University Press:  21 February 2011

L. B. Rowland ,
K. Doverspike ,
D. K. Gaskill  and
J. A. Freitas Jr
L. B. Rowland
Affiliation:
Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, DC, 20375–5347
K. Doverspike
Affiliation:
Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, DC, 20375–5347
D. K. Gaskill
Affiliation:
Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, DC, 20375–5347
J. A. Freitas Jr
Affiliation:
Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, DC, 20375–5347 Naval Research Laboratory, Washington, DC 20375 and Sachs-Freeman Associates, Landover, MD, 20785–5396
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Abstract

Gallium nitride layers were grown by organometallic vapor phase epitaxy on AlN buffer layers deposited in the range of 450–650°C. The GaN growth conditions were kept constant so that changes in film properties were due only to changes in the buffer layer growth temperature. A monotonie improvement in relative crystallinity as measured by double-crystal X-ray diffraction corresponded with a decrease in buffer layer growth temperature. Improvements in GaN electron transport at 300 and 77 K were also observed with decreasing AlN buffer layer temperature. Photoluminescence spectra for the lowest temperatures studied were dominated by sharp excitonic emission, with some broadening of the exciton linewidth observed as the buffer layer growth temperature was increased. The full width at half maximum of the excitonic emission was 2.7 meV for GaN grown on a 450°C buffer layer. These results indicate that minimizing AlN buffer layer temperature results in improvements in GaN film quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 477
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Yoshida, S., Mizawa, S., and Gonda, S., Appl. Phys. Lett. 42, 427 (1983).Google Scholar
2. Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
3. Kuznia, J. N., Khan, M. A., Olson, D. T., Kaplan, R., and Freitas, J. A. Jr, J. Appl. Phys. 73, 4700 (1993).Google Scholar
4. Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
5. Wickenden, D. K., Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., and Estes Wickenden, A., Mat. Res. Soc. Symp. Proc. 221, 167 (1991).Google Scholar
6. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
7. Rowland, L. B., Doverspike, K., Giordana, A., Fatemi, M., Gaskill, D. K., Skowronski, M., and Freitas, J. A. Jr, to be published in Proceedings of the International Conference on Silicon Carbide and Related Materials, 1994.Google Scholar
8. Yu, Z. J., Edgar, J. H., Ahmed, A. U., and Rys, A., J. Electrochem. Soc. 138, 196 (1991).Google Scholar
9. Stringfellow, G. B., Organometallic Vapor Phase Epitaxy: Theory and Practice (Academic Press, New York, 1989).Google Scholar