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Dislocation Glide Velocity in N- and P-Doped Si1−xGex Layers on Si (001)

Published online by Cambridge University Press:  22 February 2011

C. J. Gibbings ,
C. G. Tuppen  and
V. Higgs
C. J. Gibbings
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K.
C. G. Tuppen
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, U.K.
V. Higgs
Affiliation:
Department of Physics, King's College, Strand, London, WC2R 2LS, U.K.
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Abstract

Misfit dislocation glide velocities in Si.94Ge.06 layers doped to 2.1018cm−2 with boron were measured over the temperature range 500 – 600°C and found to be up to two times slower than that of undoped material. Arsenic doped Si.932Ge.0ee layers on silicon were also studied, and the glide velocity was found to be enhanced by a factor of 80 at the lowest temperature (500°C) and highest doping level (9.1018cm−2) consistent with a decrease in the activation energy for glide from approximately 2eV to 1.3eV as the doping level was increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 205
Copyright
Copyright © Materials Research Society 1991

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References

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