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Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT

Published online by Cambridge University Press:  17 March 2011

Naser Sedghi  and
Bill Eccleston
Naser Sedghi
Affiliation:
Department of Electrical Engineering and Electronics, The University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK
Bill Eccleston
Affiliation:
Department of Electrical Engineering and Electronics, The University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK
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Abstract

Steady-state space-charge limited current (SCLC) measurements are used to investigate the density of states (DOS) in the mobility gap of hydrogenated amorphous silicon (a-Si:H). The density of states is calculated by different methods based on both continuous DOS and discrete traps assumptions. The density of states found by the SCLC measurements is used to set the trap densities and trap energy levels to model a vertical a-Si:H thin-film transistor (TFT) using the Medici device simulation package. The effect of different sets of traps in the bulk of a-Si:H and variation of the physical dimensions of the device on the characteristics of the vertical TFT is studied. The simulation on the space-charge limited current is performed to verify the validity and accuracy of the SCLC method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A26.2.1
Copyright
Copyright © Materials Research Society 2001

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References

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