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Deep–Level Transient Spectroscopy Studies of Czochralski–Grown N–Type Silicon

Published online by Cambridge University Press:  22 February 2011

Yutaka Tokuda ,
Isao Katoh ,
Masayuki Katayama  and
Tadasi Hattori
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Isao Katoh
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Masayuki Katayama
Affiliation:
Research Laboratories, Nippondenso Co. Ltd., Nisshin, Aichi 470–01, Japan
Tadasi Hattori
Affiliation:
Research Laboratories, Nippondenso Co. Ltd., Nisshin, Aichi 470–01, Japan
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Abstract

Electron traps in Czochralski–grown n-type (100) silicon with and without donor annihilation annealing have been studied by deep–level transient spectroscopy. A total of eight electron traps are observed in the concentration range 1010 –1011 cm −3. It is thought that these are grown–in defects during crystal growth cooling period including donor annihilation annealing. It is suggested that two electron traps labelled A2 (Ec–0.34 eV) and A3 (Ec–0.38 eV) of these traps are correlated with oxygen–related defects. It is shown that traps A2 and A3 are formed around 400 ° C and disappear around 500–600 ° C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 373
Copyright
Copyright © Materials Research Society 1994

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