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Current-voltage characteristics of high resistivity CdTe

Published online by Cambridge University Press:  21 February 2011

Y. Iwase ,
R. Ohno  and
M. Ohmori
Y. Iwase
Affiliation:
Research and Development Group, Nikko Kyodo Co., Ltd. 3-17-35, Niizo-Minami, Toda, Saitama, 335, Japan
R. Ohno
Affiliation:
Research and Development Group, Nikko Kyodo Co., Ltd. 3-17-35, Niizo-Minami, Toda, Saitama, 335, Japan
M. Ohmori
Affiliation:
Research and Development Group, Nikko Kyodo Co., Ltd. 3-17-35, Niizo-Minami, Toda, Saitama, 335, Japan
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Extract

Current-voltage characteristics of high resistivity CdTe, with consideration to Schottky barrier height at the contact and defect levels in the band gap were investigated by experimental and numerical simulation methods. From the electron injection investigation, the density of electron traps corresponded to the doped Cl concentration in the crystal. Numerical simulation of current-voltage characteristics was made based on Schockley Read Hall (SRH) statistics. In the low bias region, calculated characteristics were in fairly close agreement with the experimental results for Pt/CdTe/Pt diode. The electric field was not uniform along the biased direction and an almost neutral region was present in the vicinity of anode contact even when the bias was applied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 225
Copyright
Copyright © Materials Research Society 1993

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