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The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon

Published online by Cambridge University Press:  26 February 2011

D.N. Seidman ,
R.S. Averback ,
P.R. Okamoto  and
A.C. Baily
D.N. Seidman
Affiliation:
Northwestern University, Materials Science Dept., Evanston, IL 60201 Argonne National Laboratory, Materials Science and Technology Division, Argonne, IL 60439
R.S. Averback
Affiliation:
Argonne National Laboratory, Materials Science and Technology Division, Argonne, IL 60439
P.R. Okamoto
Affiliation:
Argonne National Laboratory, Materials Science and Technology Division, Argonne, IL 60439
A.C. Baily
Affiliation:
Northwestern University, Materials Science Dept., Evanston, IL 60201 Argonne National Laboratory, Materials Science and Technology Division, Argonne, IL 60439
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Abstract

The amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e-) and/or ion irradiated silicon (Si). The irradiations were performed in i n the Argonne High Voltage Microscope-Tandem Facility The irradia ion of Si, at <10 K, with 1-MeV e- to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at <10 K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of ≈0.37 dpa. Alternatively a dual irradiation, at 10 K, with 1.0-MeV e and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa -- where the ratio of the displacement rates for e- to ions was ≈0.5--resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of radiation damage and the mobilities of point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 349
Copyright
Copyright © Materials Research Society 1985

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References

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