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Confinement of Threading Dislocations in Simox with a GeSi Strained Layer

Published online by Cambridge University Press:  28 February 2011

F. Namavar ,
E. Cortesi ,
D.L. Perry ,
E.A. Johnson ,
N.M. Kalkhoran ,
J.M. Manke ,
N.H. Karam ,
R.F. Pinizzotto  and
H. Yang
F. Namavar
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
E. Cortesi
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
D.L. Perry
Affiliation:
Purdue University, West Lafayette, IN
E.A. Johnson
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
N.M. Kalkhoran
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
J.M. Manke
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
N.H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA
R.F. Pinizzotto
Affiliation:
University of North Texas, Denton, TX
H. Yang
Affiliation:
University of North Texas, Denton, TX
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Abstract

We have investigated improving the crystalline quality of epitaxial silicon grown on SIMOX by confining threading dislocations in the original Si top layer using a GeSi strained layer. Epitaxial Si/GeSi/Si structures were grown by CVD on SIMOX and Si substrates with a GeSi alloy layer about 1000 − 1500 angstroms thick with Ge concentrations of about 0−20%. A Ge concentration in the alloy layer of about 5.5% or higher appears to be necessary in order to bend any of the threading dislocations from the original SIMOX top layer. For a higher Ge concentration of about 16%, most of the threading dislocations appear to be bent and confined by the GeSi layer. In addition, the GeSi strained layers grown by CVD (at about 1000°C) appear to be high quality and no misfit dislocations were observed in the regions studied by XTEM and plane view TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 503
Copyright
Copyright © Materials Research Society 1990

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References

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