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Composition Control during Growth of AlGaN Cladding Layers for InGaN-MQW Lasers with Ridge Formed by Selective Re-growth (RiS-type Lasers)

Published online by Cambridge University Press:  21 March 2011

Akitaka Kimura ,
Masaru Kuramoto  and
A. Atsushi Yamaguchi
Akitaka Kimura
Affiliation:
Photonic and Wireless Devices Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JAPAN
Masaru Kuramoto
Affiliation:
Photonic and Wireless Devices Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JAPAN
A. Atsushi Yamaguchi
Affiliation:
Photonic and Wireless Devices Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, JAPAN
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Abstract

We investigated the mask-pattern and trimethylalminium (TMAl)-flow-rate dependence of the Al composition in AlGaN selective growth for novel InGaN multiple quantum well lasers having selectively grown ridge structures (RiS-type lasers). The Al composition decreased with increases of the local coverage ratio. This result was explained quantitatively by a simple model in which the Al is deposited as polycrystals on the mask without migration occurring and the Ga is concentrated into the window. Under a high TMAl flow-rate condition, this effect of lowering the Al composition was weakened by the high Ga consumption on the mask, and an desirable Al composition for GaN-based lasers was realized. The model can be used to control the composition of p-AlGaN layers for RiS-type lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I4.5.1
Copyright
Copyright © Materials Research Society 2002

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References

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