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Combination of Metal Nano-Imprint and Excimer Laser Annealing for Location Control of Si Thin-Film Grain

Published online by Cambridge University Press:  01 February 2011

Gou Nakagawa  and
Tanemasa Asano
Gou Nakagawa
Affiliation:
[email protected], Kyushu Institute of Technology, Center for Microelectronic Systems, 680-4 Kawazu, Iizuka, Fukuoka, 820-8502, Japan
Tanemasa Asano
Affiliation:
[email protected], Kyushu Institute of Technology, Center for Microelectronic Systems, 680-4 Kawazu, Iizuka, Fukuoka, 820-8502, Japan
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Abstract

A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450oC. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μm-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.

Keywords

crystal growthlaser annealingSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A20-05
Copyright
Copyright © Materials Research Society 2006

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References

1. Oh, C. H, Ozawa, M. and Matsumura, M., Jpn. J. Appl. Phys. 37, L492 (1998).Google Scholar
2. Ishihara, R., Wilt, P. C. van der, Dijk, B. D. van, Burtsev, A., Metselaar, J. W. and Beenakker, C. I. M., AM-LCD'02, 53 (2002).Google Scholar
3. Kumomi, H., Appl. Phys. Lett. 83, 434 (2003).Google Scholar
4. Kumomi, H., Shin, C., G. Nakagawa and Asano, T., IEDM'04, 32.2.1 (2004).Google Scholar
5. Makihira, K. and Asano, T., Appl. Phys. Lett. 76, 3774 (2000).Google Scholar
6. Makihira, K., Yoshii, M. and Asano, T., Jpn. J. Appl. Phys. 42, 1983 (2003).Google Scholar
7. Nakagawa, G., Asano, T. and Miyasaka, M., AM-LCD'05, 163 (2005).Google Scholar
8. Nakagawa, G., Asano, T. and Miyasaka, M., Jpn. J. Appl. Phys. 45, In press (2006).Google Scholar
9. Nakagawa, G. and Asano, T., ITC'06, 198 (2006).Google Scholar