Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-15T13:25:12.624Z Has data issue: false hasContentIssue false
  • English
  • Français

Combination of Different Methods to Characterize Micromechanical Sensors

Published online by Cambridge University Press:  10 February 2011

R. Buchhold ,
U. Büttner ,
A. Nakladal ,
K. Sager ,
E. Hack ,
R. Brönnimann ,
U. Sennhauser  and
A. Schroth
R. Buchhold
Affiliation:
Dresden University of Technology, Inst. of Solid-State Electronics, 01062 Dresden, Germany
U. Büttner
Affiliation:
Dresden University of Technology, Inst. of Solid-State Electronics, 01062 Dresden, Germany
A. Nakladal
Affiliation:
Dresden University of Technology, Inst. of Solid-State Electronics, 01062 Dresden, Germany
K. Sager
Affiliation:
Dresden University of Technology, Inst. of Solid-State Electronics, 01062 Dresden, Germany
E. Hack
Affiliation:
EMPA, Department of Metrology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
R. Brönnimann
Affiliation:
EMPA, Department of Metrology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
U. Sennhauser
Affiliation:
EMPA, Department of Metrology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
A. Schroth
Affiliation:
Mechanical Engineering Laboratory, AIST, MITI, Namiki 1–2, Tsukuba, Ibaraki, 305 Japan
Get access

Abstract

In the last years many micromachined sensors for measuring quite different quantities have been developed (e.g. [1][2]). The successful design of silicon micromachined sensors and their conversion into commercial products is still limited by the lack of full understanding of complex fault mechanisms. In order to detect those mechanisms it seems to be advantageous to investigate interrelated phenomena by different analysis methods. By combining results of several means the true nature of disturbing effects can be determined much more easily.

This paper describes a comprehensive approach for investigating failure mechanisms in piezoresistive pressure sensors. Sophisticated methods of signal analysis were combined with special semiconductor techniques, determination of thermo-mechanical properties, Finite-Element- (FE-) simulation and Michelson interferometry. By that it was possible to separate disturbing mechanical as well as electrical effects and their relation to sensor output and sensor accuracy, respectively. In particular, we discovered complex influences of passivation layer systems (differing in geometrical and technological parameters) on sensor accuracy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 459: Symposium Y – Materials for Smart Systems II , 1996 , 243
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Steiner, F.-P., et al., Proc. of Transducer '95 in Stockholm (Sweden), 814–817 (1995).Google Scholar
[2] Takao, H., et al., Proc. of Transducer '95 in Stockholm (Sweden), 683–686 (1995).Google Scholar
[3] Gerlach, G., Sager, K. and Nakladal, A., Technisches Messen. 63 (11), 403–412 (1996).Google Scholar
[4] Sager, K., Gerlach, G. and Schroth, A., Sens. & Act. 18 (1–3), 85–88 (1994).Google Scholar
[5] Gerlach, G., PhD thesis, Dresden University of Technology, 1990.Google Scholar
[6] Bryzek, J., Proceedings of SENSOR '95 in Nuremberg (Germany), 45–50 (1995).Google Scholar
[7] Schroth, A., PhD thesis, Dresden University of Technology, 1996.Google Scholar
[8] Barbottin, G. and Vapaille, A.: Instabilities in Silicon Devices. (Elsevier Science Publishers, Amsterdam 1989).Google Scholar