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Chemical Analysis of Particles and Semiconductor Microstructures by Synchrotron Radiation Soft X-Rays Photoemission Spectromicroscopy

Published online by Cambridge University Press:  10 February 2011

F. Gozzo
Affiliation:
Intel Corp., Dept. of Components Research, Santa Clara, CA 95052
B. Triplett
Affiliation:
Intel Corp., Dept. of Components Research, Santa Clara, CA 95052
H. Fujimoto
Affiliation:
Intel Corp., Dept. of Components Research, Santa Clara, CA 95052
R. Ynzunza
Affiliation:
Intel Corp., Dept. of Materials and Technology, Santa Clara, CA 95052
P. Coon
Affiliation:
Intel Corp., Dept. of Materials and Technology, Santa Clara, CA 95052
C. Ayre
Affiliation:
Intel Corp., Dept. of Materials and Technology, Santa Clara, CA 95052
P. D. Kinney
Affiliation:
MicroTherm LLC, Minneapolis, MN 55413
Y. S. Uritsky
Affiliation:
Applied Materials Inc., Dept. of Core Technologies, Santa Clara, CA 95054
G. Ackermann
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
A. Johnsono
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
H. Padmore
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
T. Renner
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
B. Sheridan
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
W. Steele
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
Z. Hussain
Affiliation:
Lawrence Berkeley National Laboratory, Dept. of Adv. Light Source, Berkeley, CA 94620
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Abstract

Chemical analysis on a microscopic scale was performed on a TiN particle sample on silicon and on two patterned samples using a synchrotron source scanning photoemission microscope. For all the experiments, we exploit the ability, developed in our experimental system, to reach specific locations on the wafer and analyze the local chemical state.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Grman, D., Hauert, R., Hollander, E. and Amstutz, M., Solid State Technol., 35 (2), p.4347, (1992).Google Scholar
2. Ackermann, G. D., Duarte, R., Franck, K., H-owells, M. R., Hussain, Z., Irick, S., Johnson, A., Morrison, G., Padmore, H. A., Rah, S.-Y., Renner, T.R., Sheridan, B., Steele, W., Ayre, C., Fujimoto, H., Gozzo, F., Triplett, B. B., Ynzunza, R. X., Kinney, P. D., Uritsky, Y. S., presented at the 1998 MRS Spring Meeting, San Francisco, CA, 1998.Google Scholar
3. Uritsky, Y. S., Kinney, P. D., Principe, E. L., Mowat, I. and McCaig, L., presented at the 1998 MRS Spring Meeting, San Francisco, CA, 1998.Google Scholar
4. Tressaud, , Moguet, F., Flandrois, S., Chambons, M., Guimon, C., Nanse, G., Papirer, E., Gupta, V. and Bahl, O.P, J. Phys. Chem Solids, 57 (6-8), pp.745751 (1996).Google Scholar