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Characterization of Polysilicon Thin Films by Variable Angle Spectroscopic Ellipsometry
Published online by Cambridge University Press: 21 February 2011
Abstract
Variable angle spectroscopic ellipsometry was used to characterize polysilicon multilayer structures. Five different multilayer wafers, each containing a polysilicon layer, were studied. Layer thicknesses and compositions were determined at several locations across each wafer. The thickness measurements obtained by ellipsometry are compared with those determined from cross-sectional transmission electron microscopy (XTEM).
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- Copyright © Materials Research Society 1990
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