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Characterization of Cu(In,Ga)Se2/Mo Interface in CIGS Solar Cells

Published online by Cambridge University Press:  10 February 2011

S. Nishiwaki ,
N. Kohara ,
T. Negami ,
M. Nishitani  and
T. Wada
S. Nishiwaki
Affiliation:
[email protected]
N. Kohara
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
T. Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
M. Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
T. Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd. 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Abstract

The interface between a Cu(In,Ga)Se2 (CIGS) and an underlying Mo layer was studied by X-ray diffraction and high resolution transmission electron microscopy. The CIGS layer was deposited onto Mo coated soda-lime glass using the “3-stage” process. A MoSe2 layer found to form at the CIGS/Mo interface during the 2nd stage of the “3-stage” process. The thickness of the MoSe2 layer depended on the substrate temperature used for CIGS film deposition as well as the Na content of the CIGS and/or Mo layers. For higher substrate temperatures, thicker MoSe2 layers were observed. The Na in the CIGS and/or Mo layer is felt to assist in the formation of MoSe2. Current-Voltage measurements of the heterojunction formed by the CIGS/Mo interface were ohmic even at low temperature. The role of the MoSe2 layer in high efficiency CIGS solar cells is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 139
Copyright
Copyright © Materials Research Society 1998

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