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Changes in Short- and Medium-Range Order in a-Si:H Induced by Light-Soaking, Pseudodoping and Doping With Boron

Published online by Cambridge University Press:  10 February 2011

O.A. Golikova ,
M.M. Kazanin ,
V.Kh. Kudoyarova ,
G.J. Adriaenssens  and
A. Eliat
O.A. Golikova
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia
M.M. Kazanin
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia
V.Kh. Kudoyarova
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia
G.J. Adriaenssens
Affiliation:
K.U.Leuven, Laboratorium voor Halfgeleiderfysica, B- 3001, Heverlee, Belgium
A. Eliat
Affiliation:
K.U.Leuven, Laboratorium voor Halfgeleiderfysica, B- 3001, Heverlee, Belgium
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Abstract

A study of a-Si:H structure on the scales of short- and medium- range order has been carried out by the Raman spectroscopy method. Undoped a-Si:H films were deposited by the conventional rf- PECVD with some special variations in the process conditions ( pseudodoping technique); doping with boron was performed from a gas phase as well as by ion implantation. Changes in short- and medium- range order induced by light-soaking, pseudodoping and doping with boron were determined and compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 619
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Fritzsche, H., Sol.State Commun., 94, 953 (1955).Google Scholar
2 Branz, H.M., Fedders, P.A. in Materials Reliability in Microelectronics IV, edited by Bergesen, P., Coburn, J.C., Sanchez, J.E. Jr., Rodbell, K.P., Filter, W.F. ( Mater.Res.Soc.Symp.Proc. 338, Pittsburgh, PA, 1994) pp. 129–136.Google Scholar
3 Kernan, M.J., Corey, R.L., Fedders, P.A., Leopold, D.J., Norberg, R.E., Turner, W.A., Paul, W. in Amorphous Silicon Technology-1995. edited by Hack, M., Schiff, E.A., Powell, M., Matsuda, A., Madan, A. ( Mater.Res.Soc.Symp.Proc. 377, Pittsburgh, PA, 1995) pp.395–402.Google Scholar
4 Formann, C.M., Dawson, R.M., Liu, H.Y., Wronski, C.R., Appl.Phys., 76, 768 (1994).Google Scholar
5 Shimizu, K., Shiba, T., Tabuchi, T., Okamoto, H., Japan.J.Appl.Phys., 36, 29 (1997).Google Scholar
6 Shimizu, K., Tabuchi, T., Iida, M., Okamoto, H., Abstr. ICAMS 17 ( Budapest, 1997) p.209.Google Scholar
7 Goto, T., Masui, N., Kondo, M., Nonomura, S., Matsuda, A., Nitta, S., Abstr. ICAMS 17 (Budapest, 1997) p.210.Google Scholar
8 Golikova, O.A., Kudoyarova, V.Kh., Semiconductors, 29, 1128 (1995).Google Scholar
9 Golikova, O.A., Kazanin, M.M., Kuznetsov, A.N., Kudoyarova, V.Kh., Adriaenssens, G.J., Grevendonk, W., Eliat, A. ( this Symposium).Google Scholar
10 Golikova, O.A., Babakhodzhacv, U.S., Dubro, U.S., Kazanin, M.M., Mezdrogina, M.M., Yafaev, R.R., Sov.Phys.Sem. 24, 1190 (1990).Google Scholar
11 Sokolov, A.P., Shebanin, A.P., Golikova, O.A., Mezdrogina, M.M., J.Non-Cryst. Sol. 137/138, 99 (1991); Phys. Condens. Matter 3, 9887 (1991).Google Scholar
12 Golikova, O.A., Kuznetsov, A.N., Kudoyarova, V.Kh., Adriaensses, G.J., Herremans, H. in Amorphous and Microcrystalline Silicon Technology- 1997. edited by Wagner, S., Hack, M., Schiff, E.A., Schropp, R., Shimizu, I. ( Mater.Res. Soc.Symp. Proc. 467 Pittsburgh, PA, 1997) p.p.519–524.Google Scholar
13 Mahan, A.N., Nelson, B.P., Solomon, S., Crandall, R.S., J.Non- Cryst.Sol., 137/138, 657 (1991).Google Scholar
14 St'ahel, P., Hamma, S., Sladek, P. and Cabarrocas, P.Roca i, presented at the 1997 ICAMS 17, Budapest, Hungary ( to be publised).Google Scholar