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Cathodoluminescence Studies of Bound Excitons and Near Band Gap Emission Lines in Boron- and Phosphorus-Doped CVD-Diamonds

Published online by Cambridge University Press:  15 February 2011

H. Sternschulte ,
T. Albrecht ,
K. Thonke ,
R. Sauer ,
M. Grieβer  and
M. Grasserbauer
H. Sternschulte
Affiliation:
Abt. Halbleiterphysik, Universität Ulm, D-89069 Ulm, Germany
T. Albrecht
Affiliation:
Abt. Halbleiterphysik, Universität Ulm, D-89069 Ulm, Germany
K. Thonke
Affiliation:
Abt. Halbleiterphysik, Universität Ulm, D-89069 Ulm, Germany
R. Sauer
Affiliation:
Abt. Halbleiterphysik, Universität Ulm, D-89069 Ulm, Germany
M. Grieβer
Affiliation:
Institut rfiA nalytische Chemie, TU Wien, Getreidemarkt 9/151, A-1060 Wien, Austria
M. Grasserbauer
Affiliation:
Institut rfiA nalytische Chemie, TU Wien, Getreidemarkt 9/151, A-1060 Wien, Austria
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Abstract

Cathodoluminescence measurements at cryogenic temperatures are reported on boron- and phosphorus-doped CVD-diamond films grown on silicon substrates. Boron and phosphorus concentrations were determined by SIMS measurements; for boron, they reached from unintentional background doping levels up to 3500 ppm. At increasing boron concentrations, the radiative recombination of boron bound excitons (BEto) at 5.22 eV photon energy systematically broadens and shifts down to 4.99 eV whereas the free exciton emission (FEto) disappears for 40 ppm and higher. In the phosphorus-doped films we observe new lines at 5.16 eV and 4.99 eV which we ascribe to TO- and (TO+Or)-phonon assisted transitions of an exciton bound to a shallow impurity other than boron, possibly phosphorus or a phosphorus-related shallow complex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 693
Copyright
Copyright © Materials Research Society 1996

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