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Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H Mos Structures

Published online by Cambridge University Press:  28 February 2011

Ruud E. I. Schropp ,
Jan Snijder  and
Jan F. Verwey
Ruud E. I. Schropp
Affiliation:
Department of Applied Physics, Groningen State University, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
Jan Snijder
Affiliation:
Department of Applied Physics, Groningen State University, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
Jan F. Verwey
Affiliation:
Department of Applied Physics, Groningen State University, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
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Abstract

The density of states (DOS) has for the first time been calculated throughout the entire bandgap region of undoped amorphous silicon from quasi-static capacitance-voltage (QSCV) measurements using MOS structures. The QSCV DOS is compared with the DOS obtained by the field-effect method. It is shown, that the coexistence of states of a different nature at the same bandgap level can be revealed by the temperature dependence of low frequency MOS CV measurements.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 167
Copyright
Copyright © Materials Research Society 1986

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References

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