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Boron Diffusion in Si and Si1−xGex

Published online by Cambridge University Press:  15 February 2011

P. Kuo ,
J. L. Hoyt ,
J. F. Gibbons ,
J. E. Turner  and
D. Lefforge
P. Kuo
Affiliation:
Solid-State Electronics Laboratory, Stanford University, Stanford, California 94305
J. L. Hoyt
Affiliation:
Solid-State Electronics Laboratory, Stanford University, Stanford, California 94305
J. F. Gibbons
Affiliation:
Solid-State Electronics Laboratory, Stanford University, Stanford, California 94305
J. E. Turner
Affiliation:
Hewlett-Packard Company, Palo Alto, California 94303
D. Lefforge
Affiliation:
Hewlett-Packard Company, Palo Alto, California 94303
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Abstract

Boron diffusion in in-situ doped Si and strained Si1−xGex (x < 0.20) epitaxial layers, subjected to inert-ambient furnace annealing, was investigated as a function of temperature (T = 750 °C - 850 °C). Boron diffusivity parameters were extracted from SUPREM IV, a process simulation program. We observed slower B diffusion in strained Si1−xGex relative to that in Si for B concentration levels ranging from 2×1017 to 3×1019 cm−3. Using relaxed graded Si1−xGex as “substrates”, we also characterized B diffusion in relaxed Si1−xGex (x < 0.60) at T = 800 °C. We propose a reaction of mobile B atoms pairing with Ge atoms to model the slower B diffusion in both fully strained and relaxed Si1−xGex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 373
Copyright
Copyright © Materials Research Society 1995

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References

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