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The Application of Solid Phase Epitaxy for the Incorporation of Substitutional Carbon in Silicon

Published online by Cambridge University Press:  15 February 2011

Jon J. Candelaria ,
J. K. Watanabe ,
N. Da Vid Theodore ,
Richard B. Gregory ,
Dieter K. Schroder ,
Lawrence M. Stout  and
Nigel G. Cave
Jon J. Candelaria
Affiliation:
Materials Research and Strategic Technologies, Motorola Inc., 2200 W. Broadway, Mesa, AZ.
J. K. Watanabe
Affiliation:
Materials Research and Strategic Technologies, Motorola Inc., 2200 W. Broadway, Mesa, AZ.
N. Da Vid Theodore
Affiliation:
Materials Research and Strategic Technologies, Motorola Inc., 2200 W. Broadway, Mesa, AZ.
Richard B. Gregory
Affiliation:
Materials Research and Strategic Technologies, Motorola Inc., 2200 W. Broadway, Mesa, AZ.
Dieter K. Schroder
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ.
Lawrence M. Stout
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ.
Nigel G. Cave
Affiliation:
Materials Research and Strategic Technologies, Motorola Inc., 2200 W. Broadway, Mesa, AZ.
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Abstract

Carbon was substitutionally incorporated into silicon using ion implantation and solid phase epitaxy (SPE) to regenerate a high quality crystalline substrate. Carbon was implanted into Si (100) substrates using a single implant of 25 keV ai doses ranging from 1.75 × 1015 to 1.05 × 1016/cm2. After carbon implantation half of the substrates were amorphized using a silicon implant. All of the wafers were subjected to a 700°C anneal in N2 ambient for 30 Minutes to induce SPE regrowth of the implanted regions. FTIR, SIMS, RBS, and TEM were used to characterize the samples. Results indicate that carbon was substitutionally incorporated into the silicon lattice, but that some carbon did precipitate to form silicon carbide. Post-amorphization improved regrowth of implanted regions in lower dose implanted wafers. Electrical Measurements on diode structures indicate that the band gap was reduced for carbon incorporation at these concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 473
Copyright
Copyright © Materials Research Society 1994

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References

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