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Application of SiO2 Films deposited by TICS/O2 PECVD to InSb MISFET
Published online by Cambridge University Press: 10 February 2011
Abstract
We have fabricated n-channel InSb MISFETs using SiO2 films as gate insulators. The insulator was deposited by PECVD using tetra-isocyanate-silane (TICS) and oxygen (O2) as source gases. Threshold voltage and carrier mobility at 77K were 0.5V and 4200cm2/Vs, respectively.
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- Copyright © Materials Research Society 1999
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