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Amorphous Silicon Deposition Diagnostics Using Coherent Anti-Stokes Raman Spectroscopy

Published online by Cambridge University Press:  26 February 2011

Y. H. Shing ,
J. W. Perry ,
D. R. Coulter  and
G. Radhakrishnan
Y. H. Shing
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
J. W. Perry
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
D. R. Coulter
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
G. Radhakrishnan
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive, Pasadena, CA 91109
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Abstract

In situ process diagnostics using coherent anti-Stokes Raman spectroscopy (CARS) have been performed under state-of-the-art a-Si:H film deposition conditions in a reactor designed for a-Si:H solar cell fabrication. The silane plasma of device-quality a-Si:H film depositions was monitored by measuring the silane ν1 band CARS spectrum to determine the depletion induced by the RF glow discharge. The silane depletion is linearly dependent on the RF power in the region of 4 to 12 W with a slope of O.5%/mWcm−2. The depletion is also dependent on the SiH4 flow rate starting with a 50% depletion at a low flow rate of 5.6 sccm and asymptotically approaching an 8% depletion at a high flow rate of 80 sccm. The a-Si:H film deposition rate is systematically measured as a function of the flow rate and the RF power. Linear correlations between the silane depletion and the film deposition rate are observed. The results are discussed in terms of primary electron impact dissociations of silane and the residence time of SiH4 molecule in the glow discharge region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 237
Copyright
Copyright © Materials Research Society 1987

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