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Advantages of Hydrogen Peroxide as an Oxidant for Atomic Layer Deposition and Related Novel Delivery System

Published online by Cambridge University Press:  09 May 2013

Jeff Spiegelman ,
Dan Alvarez Jr ,
Russell J. Holmes ,
Ed Heinlein  and
Zohreh Shamsi
Jeff Spiegelman
Affiliation:
RASIRC, 7815 Silverton Ave, San Diego, CA, 92126, U.S.A.
Dan Alvarez Jr
Affiliation:
RASIRC, 7815 Silverton Ave, San Diego, CA, 92126, U.S.A.
Russell J. Holmes
Affiliation:
RASIRC, 7815 Silverton Ave, San Diego, CA, 92126, U.S.A.
Ed Heinlein
Affiliation:
RASIRC, 7815 Silverton Ave, San Diego, CA, 92126, U.S.A.
Zohreh Shamsi
Affiliation:
RASIRC, 7815 Silverton Ave, San Diego, CA, 92126, U.S.A.
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Abstract

Proposed is the use of Hydrogen Peroxide (H2O2) as the ideal oxidant for atomic layer deposition of metal oxide films. H2O2 has similar oxidation properties to Ozone while simultaneously having slightly stronger proton transfer properties than water. Vital to the success of any vapor phase chemistry is delivery of stable compositions, temperature and pressure. This study demonstrates the viability of a new membrane technology for the precise delivery of H2O2/ H2O mixtures starting from a liquid range of 30-70%. An in-situ gas phase cleaning process to remove carbon contamination from Ge(100) surfaces using gas phase H2O2 has been characterized.

Keywords

atomic layer depositionoxidationGe
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 209 - 214
Copyright
Copyright © Materials Research Society 2013 

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References

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