Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T09:47:41.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Activation of Sb in Ultra-Shallow Poly-Silicon Emitters Using Rapid Thermal Processing.

Published online by Cambridge University Press:  28 February 2011

Ö. Grelsson ,
A. Söderbärg ,
U. Magnusson ,
J. Olsson  and
B. Mohadjeri
Ö. Grelsson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
A. Söderbärg
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
U. Magnusson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
J. Olsson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
B. Mohadjeri
Affiliation:
Department of Solid State Electronics, The Royal Institute of Technology, P.O. Box 1298, S-164 28 Stockholm, Sweden
Get access

Abstract

An ultra-shallow poly-silicon emitter formed by different heat treatments including RTA of an evaporated, antimony doped, poly-silicon structure is presented. The fabrication process together with electrical characterizations, resistivity measurements and SIMS analysis are given. Especially, the impact of RTA treatment on the electrical characteristics of these emitter structures is investigated. Also, the IV and Gummel characteristics of a bipolar transistor with this type of poly-silicon emitter is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 317
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Söderbärg, A., Grelsson, Ö., Magnusson, U., J. Appl. Phys., L2, 7413, (1990).Google Scholar
2. Sze, S. M., Physics of Semicondutor Devices. 2nd ed. (John-Wiley & Sons 1981)Google Scholar