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Activation of Sb in Ultra-Shallow Poly-Silicon Emitters Using Rapid Thermal Processing.

Published online by Cambridge University Press:  28 February 2011

Ö. Grelsson ,
A. Söderbärg ,
U. Magnusson ,
J. Olsson  and
B. Mohadjeri
Ö. Grelsson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
A. Söderbärg
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
U. Magnusson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
J. Olsson
Affiliation:
University of Uppsala, Department of technology, P.O. Box 534, S-751 21 Uppsala, Sweden
B. Mohadjeri
Affiliation:
Department of Solid State Electronics, The Royal Institute of Technology, P.O. Box 1298, S-164 28 Stockholm, Sweden
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Abstract

An ultra-shallow poly-silicon emitter formed by different heat treatments including RTA of an evaporated, antimony doped, poly-silicon structure is presented. The fabrication process together with electrical characterizations, resistivity measurements and SIMS analysis are given. Especially, the impact of RTA treatment on the electrical characteristics of these emitter structures is investigated. Also, the IV and Gummel characteristics of a bipolar transistor with this type of poly-silicon emitter is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 317
Copyright
Copyright © Materials Research Society 1991

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References

1. Söderbärg, A., Grelsson, Ö., Magnusson, U., J. Appl. Phys., L2, 7413, (1990).Google Scholar
2. Sze, S. M., Physics of Semicondutor Devices. 2nd ed. (John-Wiley & Sons 1981)Google Scholar