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The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films

Published online by Cambridge University Press:  03 September 2012

M. Kuball ,
J.M. Hayes ,
T. Suski ,
J. Jun ,
H.H. Tan ,
J.S. Williams  and
C. Jagadish
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
J.M. Hayes
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
T. Suski
Affiliation:
UNIPRESS, Polish Academy of Sciences, Solowska 29, 01-142 Warsaw, Poland
J. Jun
Affiliation:
UNIPRESS, Polish Academy of Sciences, Solowska 29, 01-142 Warsaw, Poland
H.H. Tan
Affiliation:
Department of Electronic Materials and Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
J.S. Williams
Affiliation:
Department of Electronic Materials and Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials and Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
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Abstract

We have investigated the high-pressure high-temperature annealing of Mg/P-implanted GaN films using visible and ultraviolet (UV) micro-Raman spectroscopy. The results illustrate the use of Raman spectroscopy to monitor processing of GaN where fast feedback is required. The structural quality and the stress in ion-implanted GaN films was monitored in a 40nm-thin surface layer of the sample as well as averaged over the sample layer thickness. We find the nearly full recovery of the crystalline quality of ion-implanted GaN films after annealing at 1400-1500°C under nitrogen overpressures of 1.5GPa. No significant degradation effects occurred in the GaN surface layer during the annealing. The high nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface. Stress introduced during the annealing was monitored. Raman spectra of ion-implanted GaN films were investigated at different temperatures and excitation wavelengths to study the GaN phonon density of states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.46
Copyright
Copyright © Materials Research Society 1999

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