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System Design Considerations for Optimizing the Benefit by Unipolar SiC Power Devices.

Published online by Cambridge University Press:  11 February 2011

Roland Rupp  and
Ilia Zverev
Roland Rupp
Affiliation:
Infineon Technologies AG, Power Management & Supply, Balanstrasse 73, D-81609 Munich, Germany
Ilia Zverev
Affiliation:
Infineon Technologies AG, Power Management & Supply, Balanstrasse 73, D-81609 Munich, Germany
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Abstract

Focussing on unipolar SiC power devices a variety of applications are described, where cost reduction can be a achieved on system level even for SiC device costs being several times higher than the costs of the competing Si devices. Based on the specific properties of SiC devices like Schottky diodes and JFETs it is explained with the help of these examples how this is attainable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K7.1
Copyright
Copyright © Materials Research Society 2003

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References

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