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Sub-Half Micron Electroless Cu Metallization

Published online by Cambridge University Press:  15 February 2011

V. M. Dubin ,
Y. Shacham-Diamand ,
B. Zhao ,
P. K. Vasudev  and
C. H. Ting
V. M. Dubin
Affiliation:
School of Electrical Engineering and the National Nanofabrication Facility, Comell University, Ithaca, NY 14853
Y. Shacham-Diamand
Affiliation:
School of Electrical Engineering and the National Nanofabrication Facility, Comell University, Ithaca, NY 14853
B. Zhao
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
P. K. Vasudev
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
C. H. Ting
Affiliation:
AMD, One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088
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Abstract

Electroless Cu metallization has been fabricated by blanket electroless Cu deposition into the trenches in SiO2 dilectric layer on sputtered Cu seed layer with Ta diffusion layer and Al protection layer. Chemical-mechanical polishing of copper has been used to planarize the structure. Selective electroless CoWP layer has been deposited to protect inlaid Cu metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 179
Copyright
Copyright © Materials Research Society 1996

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References

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2. Shacham-Diamand, Y., J. Micromech. Microeng., 1, 66 (1991).Google Scholar
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4. Shacham-Diamand, Y., Dubin, V. M., Angyal, M., Thin Solid Films, 262, 93 (1995).Google Scholar