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Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia

Published online by Cambridge University Press:  26 February 2011

Robert Grynszpan ,
G. Brauer  and
W. Anwand
Robert Grynszpan
Affiliation:
[email protected], DGA-DCE-CTA-LOT, 16 bis Av. Pr. de la Côte d’Or, Arcueil, ., 94114 Arcueil, France
G. Brauer
Affiliation:
[email protected]
W. Anwand
Affiliation:
[email protected]
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Abstract

Implantation with a variety of sub-MeV ions (He, Ar, Xe, O, and I) were performed on cubic single crystals of yttria-stabilized zirconia in order to assess the capability of such material to withstand high fluences as a confinement matrix for nuclear waste. In this work, we confronted the results of both Doppler Broadening using slow positron implantation spectroscopy (DB-SPIS) and the Rutherford Backscattering/Channeling spectroscopy (RBS-C) which are sensitive to lattice defects almost opposite in nature. In spite of their difference in defect specific sensitivity, and except for a precursory damage production stage almost exclusively exhibited by SPIS for very low doses (< 0.1 dpa), either techniques show a similar fluence dependence, which exhibits 3 stages starting respectively around 0.1, 2 and 3 dpa, regardless of the damaging ion. However, owing to the stage I plateau displayed in the variation of the DB-SPIS lineshape parameter, we were able to estimate an ion-mass dependence of the critical size of open-volume defects reached before the production of new predominant defects.

Keywords

ZrOion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO10-01
Copyright
Copyright © Materials Research Society 2006

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