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“Open structure” semiconductors: Clathrate and channel compounds for low thermal conductivity thermoelectric materials

Published online by Cambridge University Press:  18 March 2011

George S. Nolas*
Affiliation:
R&D Division, Marlow Industries, Inc., 10451 Vista Park Road, Dallas, Texas 75238
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Abstract

In a good semiconductor the electrons (or holes) propagate through the lattice structure of well ordered atoms without being scattered by the coherent vibrations of the crystal. Thus semiconductors are good conductors of electrons (or holes) and as such have given rise to modern microprocessors that are revolutionizing the way we live. In the same semiconductors the vibrations of the lattice atoms mainly carry the heat. Due to the covalent nature of the bonding in these materials the thermal conductivity is very large. These are therefore poor materials for thermoelectric applications. If the atomic vibrations, or phonons, can be localized so that the heat transfer is essentially an atom-to- atom propagation, then the thermal conduction can be drastically reduced. A semiconductor can, in principle, have the thermal conductivity of a glass. Amorphous semiconductors are of course very poor conductors of electricity therefore one does not want the electrons to propagate through a glass-like material. Instead one wants the electrons to travel as though they only “see” the well-ordered, periodic structure of a crystal while the phonons are scattered by localized disorder within the covalently bonded lattice. “Open structure” semiconductors do, in fact, exist and recent research has given rise to new thermoelectric materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.For a recent review see Nolas, G.S., Slack, G.A. and Schujman, S.B., Semiconductors and Semimetals, Vol. 69, edited by Tritt, T.M. (Academic Press, San Diego, 2000), p. 255 and references therein.Google Scholar
2.Two review articles: Nolas, G.S., Morelli, D.T. and Tritt, T.M., Annu. Rev. Mater. Sci., Vol. 29 (1999) p. 89 and Uher, C., Semiconductors and Semimetals, Vol. 69, edited by Tritt, T.M. (Academic Press, San Diego, 2000), p. 139.Google Scholar
3. Nolas, G. S., Cohn, J. L., Slack, G. A. and Schujman, S. B., Appl. Phys. Lett., Vol. 73 (1998) p. 178; J.L Cohn, G.S. Nolas, V. Fessatidis, T.H. Metcalf and G.A. Slack, Phys. Rev. Lett., Vol. 82 (1999) p. 779; G.S. Nolas, T.J.R. Weakley, J.L. Cohn and R. Sharma, Phys. Rev. B, Vol. 61 (2000) p. 3845.Google Scholar
4. Slack, G.A., Mat. Res. Soc. Symp. Proc., Vol. 478 (1997) p. 47.Google Scholar
5. Keppens, V.et al., Nature, Vol. 395 (1998) p. 876 Google Scholar
6. Nolas, G.S. and Kendziora, C.A., Phys. Rev. B, Vol. 59 (1999) p. 6189.Google Scholar
7. Nolas, G.S., Slack, G.A., Morelli, D.T., Tritt, T.M. and Ehrlich, A., J. Appl. Phys., Vol. 79 (1996) p. 4002.Google Scholar
8. Abeles, B., Phys. Rev., Vol. 131 (1963) p. 1906.Google Scholar
9.See for example Cros, C., Pouchard, M. and Hagenmuller, P., J. Solid State Chem., Vol. 2 (1970) p. 570 and references therein.Google Scholar
10. Nolas, G.S., Cohn, J.L., Kaeser, M. and Tritt, T.M., Mater. Res. Soc. Symp. Proc., Vol. 626 (2001) p. Z13.1.1.Google Scholar
11. Dong, J., Sankey, O.F., Ramachandran, G.K. and McMillan, P.F., J. Appl. Phys., Vol. 87 (2000) p. 7726.Google Scholar
12. Nolas, G.S. and Kendziora, C.A., Phys. Rev. B, Vol. 62 (2000) p. 7157.Google Scholar
13. Nolas, G.S., Chakoumakos, B.C., Mahieu, B., Long, J. and Weakley, T.J.R., Chem. Mater., Vol. 12 (2000) p. 1947.Google Scholar
14. Chakoumakos, B.C., Sales, B.C., Mandrus, D.G. and Nolas, G.S., J. Alloys and Comp., Vol. 296 (2000) p. 80.Google Scholar