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A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor
Published online by Cambridge University Press: 21 February 2011
Abstract
A new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.
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- Copyright © Materials Research Society 1984
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