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On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium
Published online by Cambridge University Press: 21 April 2011
Abstract
The impact of metallic impurities on the carrier lifetime in n-Ge is studied using microwave reflection and absorption techniques. Co, Fe, Ti, Ni and Cr are introduced by ion implantation followed by a thermal anneal and quenching to room temperature. Excess carrier decay transients are examined by microwave reflection and absorption probing after pulsed light excitation. A detailed analysis allows to evaluate the ratio of the capture cross-sections for minority and majority carriers revealing an acceptor-like character of the metal induced traps. Cross-sectional lifetime measurements show an U-shaped depth distribution with the lowest lifetimes in the bulk of the wafer. The lifetime results are correlated with those of deep level transient spectroscopy in order to clarify the properties of the dominant metal related recombination centres. Fe and Co are the most effective lifetime killers in n-Ge while Cr has the least influence.
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- Copyright © Materials Research Society 2007
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