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Novel End-point Detection Method by Monitoring Shear Force Oscillation Frequency for Barrier Metal Polishing in Advanced LSI

Published online by Cambridge University Press:  31 January 2011

Xun Gu ,
Takenao Nemoto ,
Yasa Adi Sampurno ,
Jiang Cheng ,
Sian Nie Theng ,
Ara Philipossian ,
Yun Zhuang ,
Akinobu Teramoto ,
Takashi Ito  and
Shigetoshi Sugawa
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Xun Gu
Affiliation:
[email protected], Tohoku University, Graduate School of Engineering, Miyagi, Japan
Takenao Nemoto
Affiliation:
[email protected], Tohoku University, Sendai, Japan
Yasa Adi Sampurno
Affiliation:
[email protected], University of Arizona, Tuscon, Arizona, United States
Jiang Cheng
Affiliation:
[email protected], University of Arizona, Tuscon, Arizona, United States
Sian Nie Theng
Affiliation:
[email protected], University of Arizona, Tuscon, Arizona, United States
Ara Philipossian
Affiliation:
[email protected], Araca Incorporated, Tucson, Arizona, United States
Yun Zhuang
Affiliation:
[email protected], Araca Incorporated, Tucson, Arizona, United States
Akinobu Teramoto
Affiliation:
[email protected], Tohoku University, New Industry Creation Hatchery Center, Miyagi, Japan
Takashi Ito
Affiliation:
[email protected], Tohoku University, Graduate School of Engineering, Miyagi, Japan
Shigetoshi Sugawa
Affiliation:
[email protected], Tohoku University, Graduate School of Engineering, Miyagi, Japan
Tadahiro Ohmi
Affiliation:
[email protected], United States
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Abstract

A novel end-point detection method based on a combination of shear force and its spectral amplitude was proposed for barrier metal polishing on copper damascene structures. Under some polishing conditions, the shear force changed significantly with polished substrate. On the other hand, the change in shear force was insignificant under certain polishing conditions. Therefore, a complementary end-point detection method by monitoring oscillation frequency of shear force was proposed. It was found that the shear force fluctuated in unique frequencies depending on polished substrates. Using Fast Fourier Transformation, the shear force data was converted from time domain to frequency domain. The amplitude of spectral frequencies corresponding to the rotational rate of wafer carrier and platen was monitored. Significant frequency amplitude changes were observed before, during and after the polished layer transition from barrier film to silicon dioxide film. The results indicated that a combination of shear force and its spectral amplitude analyses provided effective end-point detection for barrier CMP process.

Keywords

CMPbarrier layerTa
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1157: Symposium E – Science and Technology of Chemical Mechanical Planarization (CMP) , 2009 , 1157-E13-03
Copyright
Copyright © Materials Research Society 2009

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References

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