Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T08:37:43.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Millisecond-annealing using flash lamps for improved performance of AZO layers

Published online by Cambridge University Press:  22 September 2011

T. Gebel ,
M. Neubert ,
R. Endler ,
J. Weber ,
M. Vinnichenko ,
A. Kolitsch ,
W. Skorupa  and
H. Liepack
T. Gebel
Affiliation:
DTF Technology GmbH - Dresden Thin Film Technology, Meschwitzstr. 21, 01099 Dresden Germany
M. Neubert
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
R. Endler
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
J. Weber
Affiliation:
DTF Technology GmbH - Dresden Thin Film Technology, Meschwitzstr. 21, 01099 Dresden Germany
M. Vinnichenko
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
A. Kolitsch
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
W. Skorupa
Affiliation:
FZD Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
H. Liepack
Affiliation:
DTF Technology GmbH - Dresden Thin Film Technology, Meschwitzstr. 21, 01099 Dresden Germany
Get access

Abstract

ZnO:Al films with a thickness of about 880nm were deposited by magnetron sputtering. The glass substrate was not heated neither before during nor after the deposition. Subsequently the deposited layers were treated by flash lamp annealing (FLA) at 1.3 ms. Using this method, the resistivity of the ZnO:Al films was decreased by a factor of two, down to 1.0 x 10-3 Ωcm. These results are in good agreement with results reported from rapid thermal processing or furnace annealing treatments. Despite the very short annealing time of only 1.3 ms not only the resistivity but also the transmittance in the UV and the blue range were considerably improved.

Keywords

annealingtransparent conductorsputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f10-10
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smalley, R. E., MRS Bulletin 30, 412 (2005).Google Scholar
2. Cornelius, S., Vinnichenko, M., Shevchenko, N., Rogozin, A., Kolitsch, A., and Möller, W.. Applied Physics Letters 94, 25 (2009).Google Scholar
3. Prucnal, S., Sun, J. M., Muecklich, A., and Skorupa, W., Electrochem. Solid-State Letters. 10, H50 (2007).Google Scholar
4. Hyung, Jun, Uk, Sung, Hong, Byungyou, Deok, Yong, Young, Jin, Dong, Hee, Park, Mungi, and Seok, Won. Thin Solid Films 518, 2941 (2010).Google Scholar
5. Byeong-yun, Oh, Jeong, Min-chang, Kim, Doo-soo, Lee, Woong, and Myoung Ã, Jae-min. Journal of Crystal Growth 281, 475 (2005).Google Scholar
6. Lennon, C., Tapia, R. B., Kodama, R., Chang, Y., Sivananthan, S, and Deshpande, M.. Electronic Materials 38, 1568 (2009).Google Scholar
7. Lu, J. G., and Fujita, S.. Applied Physics 101, 12 (2007).Google Scholar
8. Sernelius, B. E., Berggren, K.-F., Jin, Z.-C., Hamberg, I., and Granqvist, C.G.. Physical Review B 37, 244 (1988).Google Scholar
9. Lu, J.G., Ye, Z. Z., Zeng, Y. J., Zhu, L. P., Wang, L., Yuan, J., and Zhao, B. H.. Applied Physics 100, (2006).Google Scholar