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Microscopic Measurements of Electromigration Damage Using Electrical Measurements

Published online by Cambridge University Press:  15 February 2011

Brian K Jones
Brian K Jones*
Affiliation:
School of Physics and Chemistry, Lancaster University, Lancaster, LA 1 4YB, United Kingdom
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Abstract

Continuous measurements have been made of the changes in several electrical quantities of Al 4%Cu tracks during the lifetime under electromigration stress. The changes in resistance, second harmonic and the second harmonic delay have been used to determine the changes in the track cross-section, resistivity and temperature. During most of the lifetime the results are consistent with a linear increase in the microscopic damage occurring uniformly throughout the track. During the final phase of the life there is evidence of large void formation with subsequent healing. Considerable information can be obtained about these processes and the extent to which they are reversible. The observed events are compared with the changes which have been predicted by specific mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 489
Copyright
Copyright © Materials Research Society 1995

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References

1 Jones, B.K., Xu, Y.Z. and Zobbi, P., Proc. ESREF94, pps. 371–6.Google Scholar
2 Shih, W.C., Greer, A.L., Xu, Y.Z. and Jones, B.K., Mat. Res. Soc. Symp. Proc. 309 369–76 (1993).Google Scholar
3 Jones, B.K., Advances in Electronics and Electron Physics, 87 201–57 (1993).Google Scholar
4 Jones, B.K. and Xu, Y.Z., Microelectron. Reliab. 33 1829–40 (1993).Google Scholar
5 Jones, B.K. and Xu, Y.Z., The Measurement of the Electrical Properties of Electromigration Specimens, in preparation (1994).Google Scholar
6 Jones, B.K., Xu, Y.Z., Denton, T.C. and Zobbi, P., Microelectron. Reliab. 35 13–25 (1995).Google Scholar
7 Jones, B.K., Xu, Y.Z. and T.C.Denton, , Quality and Reliability Eng. Int. 10 315–8 (1994).Google Scholar
8 D'Haeger, V., Stulens, H., DeCeuninck, W., DeSchepper, L., Gollopyn, G., DePauw, P. and L.M.Stals, , Proc. ESREF93 141–5.Google Scholar
9 Sanchez, J.E. and Van, Pham, in Mat. Reliab. in Microelectron. IV (Mater. Res. Soc. Proc. 338, Pittsburgh, PA, 1994) p. 459.Google Scholar
10 Besser, P.R., Madden, M.C. and Flinn, P.A., J. Appl. Phys. 72 3792–7 (1992).Google Scholar
11 Lloyd, J.R. and Kitchin, J., Mat. Res. Soc. Symp. Proc. 309 339–4 (1993).Google Scholar
12 Suhl, H. and Turner, P.A., J. Appl. Phys. 44 4891–5 (1973).Google Scholar
13 Nix, W.D. and Arzt, E., Met. Trans. 23A 2007–13 (1992).Google Scholar
14 Shingubara, S., Nakasoki, Y. and Kaneko, H., Appl. Phys. Lett. 58 42–4 (1991).Google Scholar
15 Lacombe, D.J. and Parks, E., Proc. 1RPS 1975, 74–80 (1985).Google Scholar
16 Arzt, E., Kraft, O., Nix, W.D. and Sanchez, J.E., J. Appl. Phys. 76 1563–71 (1994).Google Scholar
17 Kawanoue, T., Kaneko, H., Hasunuma, M. and Miyauchi, M., J. Appl. Phys. 74 4423–9 (1993)Google Scholar
18 Kim, C. and Morris, J.W., J. Appl. Phys. 73 4885–93 (1993).Google Scholar
19 Sanchez, J.E., McKnelly, L.T. and Morris, J.W., J. Electron. Mat. 19 1213–20 (1990).Google Scholar
20 C-F, Hong, Togo, M.and Koichiro, Hoh, Jpn. J. Appl. Phys. 32 L247–50 (1993).Google Scholar
21 Shingubara, S., Kaneko, H. and Saitoh, M., J. Appl. Phys. 69 207–12 (1991).Google Scholar