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Low Temperature Annealing of Inkjet-Printed Silicon Thin-Films for Photovoltaic and Thermoelectric Devices

Published online by Cambridge University Press:  11 July 2013

Etienne Drahi ,
Anshul Gupta ,
Sylvain Blayac ,
Sébastien Saunier ,
Laurent Lombez ,
Marie Jubault ,
Gilles Renou  and
Patrick Benaben
Etienne Drahi
Affiliation:
Centre Microélectronique de Provence, Ecole Nationale Supérieure des Mines de Saint Etienne, 13541 Gardanne cedex, France
Anshul Gupta
Affiliation:
Centre Microélectronique de Provence, Ecole Nationale Supérieure des Mines de Saint Etienne, 13541 Gardanne cedex, France
Sylvain Blayac
Affiliation:
Centre Microélectronique de Provence, Ecole Nationale Supérieure des Mines de Saint Etienne, 13541 Gardanne cedex, France
Sébastien Saunier
Affiliation:
Science des Matériaux et des Structure, Ecole Nationale Supérieure des Mines de Saint Etienne, 42023 Saint-Etienne cedex 2, France
Laurent Lombez
Affiliation:
Institut de Recherche et Développement sur l’Energie Photovoltaïque (IRDEP), UMR 7174, EDF-CNRS-Chimie Paristech, 6 quai Watier, 78401 Chatou, France
Marie Jubault
Affiliation:
Institut de Recherche et Développement sur l’Energie Photovoltaïque (IRDEP), UMR 7174, EDF-CNRS-Chimie Paristech, 6 quai Watier, 78401 Chatou, France
Gilles Renou
Affiliation:
Institut de Recherche et Développement sur l’Energie Photovoltaïque (IRDEP), UMR 7174, EDF-CNRS-Chimie Paristech, 6 quai Watier, 78401 Chatou, France
Patrick Benaben
Affiliation:
Centre Microélectronique de Provence, Ecole Nationale Supérieure des Mines de Saint Etienne, 13541 Gardanne cedex, France
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Abstract

Silicon nanoparticles-based inks were investigated in respect of their suitability for photovoltaic and thermoelectric applications. Nanoparticles with a diameter ranging between 20 to 150 nm were functionalized in order to avoid oxidation as well as having a good stability in suspension. After inkjet-printing and drying, they were annealed up to 1000 °C under nitrogen atmosphere by both rapid thermal and microwave annealing. The influence of the annealing treatment on the structural, electrical, optical and thermal properties was investigated by Raman, SEM, electrical and optical measurements. SEM and Raman demonstrate evolution of the microstructure at temperature as low as 600 °C. Optical, electrical and thermal properties depend strongly on the annealing temperature and tend to exhibit a modification of physical properties above 800 °C when the smallest nanoparticles begin to melt. The annealing method has been identified to be of primary importance on the layer microstructure and its thermal behavior.

Keywords

sinteringthin filmSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 201 - 206
Copyright
Copyright © Materials Research Society 2013 

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References

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