Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Liu, R.-J.
Smith, L. L.
Kim, M. J.
Carpenter, R. W.
and
Davis, R. F.
1998.
Microstructure Of Au/Ti Ohmic Contacts On n-GaN.
Microscopy and Microanalysis,
Vol. 4,
Issue. S2,
p.
668.
DeLucca, J. M.
Venugopalan, H. S.
Mohney, S. E.
and
Karlicek, R. F.
1998.
Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN.
Applied Physics Letters,
Vol. 73,
Issue. 23,
p.
3402.
Cao, X. A.
Ren, F.
Lothian, J. R.
Pearton, S. J.
Abernathy, C. R.
Zolper, J. C.
Cole, M. W.
Zeitouny, A.
Eizenberg, M.
and
Shul, R. J.
1998.
Behavior of W and WSix Contact Metallization on n- and p- Type GaN.
MRS Proceedings,
Vol. 537,
Issue. ,
Cao, X. A.
Pearton, S. J.
Ren, F.
and
Lothian, J. R.
1998.
Thermal stability of W and WSix contacts on p-GaN.
Applied Physics Letters,
Vol. 73,
Issue. 7,
p.
942.
Liu, Q.Z.
and
Lau, S.S.
1998.
A review of the metal–GaN contact technology.
Solid-State Electronics,
Vol. 42,
Issue. 5,
p.
677.
Liu, Bo
Ahonen, Mikko H.
and
Holloway, Paul H.
1999.
A Thermodynamic Approach to Ohmic Contact Formation to p-GaN.
MRS Proceedings,
Vol. 595,
Issue. ,
Cao, X. A.
Ren, F.
Pearton, S. J.
Zeitouny, A.
Eizenberg, M.
Zolper, J. C.
Abernathy, C. R.
Han, J.
Shul, R. J.
and
Lothian, J. R.
1999.
W and WSix Ohmic contacts on p- and n-type GaN.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 17,
Issue. 4,
p.
1221.
Ho, Jin-Kuo
Jong, Charng-Shyang
Chiu, Chien C.
Huang, Chao-Nien
Chen, Chin-Yuen
and
Shih, Kwang-Kuo
1999.
Low-resistance ohmic contacts to p-type GaN.
Applied Physics Letters,
Vol. 74,
Issue. 9,
p.
1275.
Cao, X. A.
Ren, F.
Lothian, J. R.
Pearton, S. J.
Abernathy, C. R.
Zolper, J. C.
Cole, M. W.
Zeitouny, A.
Eizenberg, M.
and
Shul, R. J.
1999.
Behavior of W and WSix Contact Metallization on n- and p- Type GaN.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 4,
Issue. S1,
p.
684.
Ingerly, D. B.
Chang, Y. A.
and
Chen, Y.
1999.
The electrical behavior of Pt3In7 and NiIn contacts to p-GaN.
Applied Physics Letters,
Vol. 74,
Issue. 17,
p.
2480.
Park, Mi-Ran
Anderson, Wayne A.
and
Park, Seong-Ju
1999.
Improved Low Resistance Contacts of Ni/Au and Pd/Au to P-Type GaN Using a Cryogenic Treatment.
MRS Proceedings,
Vol. 595,
Issue. ,
Ho, Jin-Kuo
Jong, Charng-Shyang
Chiu, Chien C.
Huang, Chao-Nien
Shih, Kwang-Kuo
Chen, Li-Chien
Chen, Fu-Rong
and
Kai, Ji-Jung
1999.
Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films.
Journal of Applied Physics,
Vol. 86,
Issue. 8,
p.
4491.
Pearton, S. J.
Zolper, J. C.
Shul, R. J.
and
Ren, F.
1999.
GaN: Processing, defects, and devices.
Journal of Applied Physics,
Vol. 86,
Issue. 1,
p.
1.
Pearton, S.J.
Ren, F.
Zhang, A.P.
and
Lee, K.P.
2000.
Fabrication and performance of GaN electronic devices.
Materials Science and Engineering: R: Reports,
Vol. 30,
Issue. 3-6,
p.
55.
Chu, Chen-Fu
Yu, C. C.
Wang, Y. K.
Tsai, J. Y.
Lai, F. I.
and
Wang, S. C.
2000.
Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization.
Applied Physics Letters,
Vol. 77,
Issue. 21,
p.
3423.
Park, Mi-Ran
Anderson, Wayne A.
and
Park, Seong-Ju
2000.
Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 5,
Issue. S1,
p.
901.
Liu, Bo
Ahonen, Mikko H.
and
Holloway, Paul H.
2000.
A Thermodynamic Approach to Ohmic Contact Formation to p-GaN.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 5,
Issue. S1,
p.
908.
Jang, Ja-Soon
Park, Seong-Ju
and
Seong, Tae-Yeon
2000.
Low Resistance and Thermally Stable Pt/Ru Ohmic Contacts to p-Type GaN.
physica status solidi (a),
Vol. 180,
Issue. 1,
p.
103.
Kuo, C.H
Sheu, J.K
Chi, G.C
Huang, Y.L
and
Yeh, T.W
2001.
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices.
Solid-State Electronics,
Vol. 45,
Issue. 5,
p.
717.
Jang, Ja-Soon
Kim, Dong-Jun
Park, Seong-Ju
and
Seong, Tae-Yeon
2001.
Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN.
Journal of Electronic Materials,
Vol. 30,
Issue. 2,
p.
94.