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Incorporation of fluorine into the n-type (AIxGayIn1−x−y)as System
Published online by Cambridge University Press: 10 February 2011
Abstract
In order to elucidate the degradation of the electrical properties of AlInAs/GaInAs high electron mobility transistors during thermal treatment due to the fluorine contamination, the material dependence of this phenomenon has been investigated in AIxGayIn1−x−y As and AlxGayIn1−x−y P systems. The thermal degradation is found to be peculiar to the material containing both of AlAs and InAs, and most serious degradation occurs when the compositional ratio of AlAs to InAs is 1:1. It is also observed that donor-fluorine bonds are formed in the thermally annealed n-type AlInAs layers. The thermal degradation is thought to be due to the fscattering effect of the donorfluorine complex.
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- Copyright © Materials Research Society 1996
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