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Hydrogen Passivation Caused by ‘Soft’ Sputter Etch Cleaning of Si

Published online by Cambridge University Press:  25 February 2011

A.S. Vercaemst ,
R.L. Van Meirhaeghe ,
W. Laflere  and
F. Cardon
A.S. Vercaemst
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof Department of Solid State Science, University of Ghent Krijgslaan 281/S1, B-9000 Gent, Belgium
R.L. Van Meirhaeghe
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof Department of Solid State Science, University of Ghent Krijgslaan 281/S1, B-9000 Gent, Belgium
W. Laflere
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof Department of Solid State Science, University of Ghent Krijgslaan 281/S1, B-9000 Gent, Belgium
F. Cardon
Affiliation:
Laboratorium voor Kristallografie en Studie van de Vaste Stof Department of Solid State Science, University of Ghent Krijgslaan 281/S1, B-9000 Gent, Belgium
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Abstract

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 657
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Sah, C.-T., Sun, J Y.-C. and Tzou, J. J.-T., Appl. Phys. Lett. 43(2), 204 (1983).Google Scholar
2 Pankove, J.I., Carlson, D.E., Berkeyheiser, J.E. and Wance, R.O., Phys. Rev. Let. 51(24), 2224 (1983).Google Scholar
3 Johnson, N.M., Herring, C. and Chadi, D.J., Phys. Rev. Let. 56(7), 769 (1986).CrossRefGoogle Scholar
4 Seager, C.H., Anderson, R.A. and Panitz, J.K.G., J. Mater. Res. 2(1), 96 (1987).CrossRefGoogle Scholar
5 Pearton, S.J., Cobett, J.W. and Stavola, M., Hydrogen in Crystalline Semiconductors, edited by Queisser, H.-J. (Springer Series in Materials Science, 1991), pp. 157–174.Google Scholar
6 Vercaemst, A.S., Van Meirhaeghe, R.L., Laflère, W., Cardon, F., De Bosscher, W. and Schreutelkamp, R.J., Sol. St. Elec. 36(5), 753 (1993).Google Scholar