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Hydrogen in GaN-Experiments

Published online by Cambridge University Press:  10 February 2011

S. J. Pearton ,
J. W. LEE ,
R. G. Wilson ,
J. M. Zavada ,
M. G. Weinstein ,
C. Y. Song  and
M. Stavola
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. W. LEE
Affiliation:
Plasma-Therm, Inc., St. Petersburg, FL 33716
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 91381
J. M. Zavada
Affiliation:
Army Research Office, Research Triangle Park, NC 27709
M. G. Weinstein
Affiliation:
Department of Physics, Lehigh University, Bethlehem, PA 18015
C. Y. Song
Affiliation:
Department of Physics, Lehigh University, Bethlehem, PA 18015
M. Stavola
Affiliation:
Department of Physics, Lehigh University, Bethlehem, PA 18015
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Abstract

Hydrogen is an important component of the gas phase growth chemistry for GaN (eg. NH3, (CH 3)3 Ga)and the processing environment for subsequent device fabrication (eg. SiH4 for dielectric deposition, NH3 or H2 annealing ambients), and is found to readily permeate into heteroepitaxial material at temperatures ≤200°C. Its main effect has been the passivation of Mg acceptors in p-GaN through formation of neutral Mg-H complexes, which can be dissociated through minority-carrier (electron) injection or simple thermal annealing. Atomic hydrogen is also found to passivate a variety of other species in GaN, as detected by a change in the electrical or optical properties of the material. An example is the increase in luminescence efficiency of Er3+ ions in AIN after hydrogenation, through passivation of non-radiative states that would be an alternative path for de-excitation. The injection of hydrogen during a large variety of device fabrication steps has been detected by SIMS profiling using 2H isotopic labeling. Basically all of the acceptor species in GaN, namely Mg, C, Ca and Cd are found to form complexes with hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 229
Copyright
Copyright © Materials Research Society 1998

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