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HNO3 treatment of sapphire for management of GaN polarity in MOCVD method: Comparison of the properties of +c and –c GaN region
Published online by Cambridge University Press: 01 February 2011
Abstract
GaN film with Ga- (+c) and N- (-c) face polarities was simultaneously grown on c-plane sapphire substrate by using only metalorganic chemical vapor deposition. Although several kinds of processes were examined, we achieved the simultaneous growth by using the patterned AlN nucleation layer or selective treatment of sapphire surface in HNO3 solution. The latter process improved not only the quality of the sample but also the boundary between +c and –c GaN region, because the treat of substrate itself for controlling the polarity of GaN was carried out at lower temperature. The PL and Raman spectra of the simultaneous growth samples indicated larger amount of impurities in –c GaN side, which was consistent with our previous work [Sumiya et al. Appl. Phys. Lett. 76, 2098 (2000)].
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- Copyright © Materials Research Society 2004