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Grain Boundary Migration and Grain Growth Induced by Electromigration in Copper and Aluminum Lines

Published online by Cambridge University Press:  15 February 2011

A. Gladkikh ,
E. Glickman ,
M. Karpovsky ,
Y. Lereah ,
A. Palevski  and
J. Shubert
A. Gladkikh
Affiliation:
Tel Aviv University, Department of Physical Electronics, Tel Aviv 69978, Israel
E. Glickman
Affiliation:
The Hebrew University, Graduate School of Applied Science, Jerusalem 91904, Israel
M. Karpovsky
Affiliation:
Tel Aviv University, School of Physics and Astronomy, Tel Aviv 69978,Israel
Y. Lereah
Affiliation:
Tel Aviv University, Department of Physical Electronics, Tel Aviv 69978, Israel
A. Palevski
Affiliation:
Tel Aviv University, School of Physics and Astronomy, Tel Aviv 69978,Israel
J. Shubert
Affiliation:
Intel Electronics Ltd., Jerusalem 91031, Israel
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Abstract

The changes of microstructure in Al and Cu thin film lines due to electromigration have been studied using transmission electron microscopy. Grain boundary migration, inclination and dislocation activity were found to be critically involved in the electromigration induced hillock formation that can be described as three dimensional grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 283
Copyright
Copyright © Materials Research Society 1995

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