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Formation of Tisi2 Thin Films from Chemical Vapor Deposition Using TiI4

Published online by Cambridge University Press:  10 February 2011

HwaSung Rhee ,
TaeWoong Jang ,
JongTae Baek  and
ByungTae Ahn
HwaSung Rhee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
TaeWoong Jang
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
JongTae Baek
Affiliation:
Process and Equipment Laboratory, Electronics and Telecommunications Research Institute, 161 Kajung-dong, Yusung-gu, Taejon 305-350, Korea
ByungTae Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, Korea
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Abstract

The formation of TiSi2 films by chemical vapor deposition was investigated for the application as a contact plug material because of its low resistivity, low contact resistance with n+ and p+ Si, and good chemical stability with Si. TiI4 and SiH4 were used as source gases. Since TiI4 is thermodynamically less stable than TiCl4, the deposition temperature of TiSi2 with TiI4 precursor could be lower than that of TiSi2 from TiCl4 precursor. TiSi2 thin films with C49 phase were formed at 650°C on Si (100) wafer, while a Ti5Si3 phase was formed at 650°C on SiO2 substrate. The resistivity of the C49 phase films was 210 μΩ-cm. The C49 phase was completely transformed into a C54 phase above 800°C annealing in an N2 atmosphere and the resistivity reduced to 34 μΩ-cm. We were able to deposit TiSi2 films at lower temperature using TiI4 precursor, compared to TiCl4 precursor. The Cl and HCI byproducts originated from TiCl4 can be excluded using TiI4 precursor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 345
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Burggraaf, R., Semiconductor International, 12, 28 (1990).Google Scholar
2. Maex, K., Materials Science and Engineering, R 11, 53 (1993).Google Scholar
3. Ilderem, V. and Reif, R., J. Electrochem. Soc., (135) 10, 2590 (1988).Google Scholar
4. Bouteville, A., Attuyt, C., and Remy, J. C., Applied Surface Science, 53, 11 (1991).Google Scholar
5. Saito, K., Higashi, Y., Amazawa, T., and Arita, Y., J. Electrochem. Soc., (141) 7, 1879 (1994).Google Scholar
6. Faltermeier, C., Goldberg, C., Jones, M., Upham, A., Manger, D., Peterson, G., Lau, J., and Kaloyeros, A. E., J. Electrochem. Soc., (144) 3, 1002 (1997).10.1149/1.1837520Google Scholar
7. Faltermeier, C., Goldberg, C., Jones, M., Upham, A., Knorr, A., Ivanova, A., Peterson, G., and Kaloyeros, A. E., J. Electrochem. Soc., (145) 2, 676 (1998).10.1149/1.1838322Google Scholar
8. Sullivan, L. A. and Han, B., Solidstate Technology, 5, 91 (1996).Google Scholar
9. Eriksson, G., Chemica Scripta., 8, 100 (1975)Google Scholar