Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T08:51:05.301Z Has data issue: false hasContentIssue false
  • English
  • Français

Floating Body Induced Transient Characteristics in Polycrystalline Silicon TFTs

Published online by Cambridge University Press:  17 March 2011

Y.Z. Xu ,
F.J. Clough ,
E.M.S. Narayanan  and
R. Cross
Y.Z. Xu
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UKTele.116 - 2506157; Fax.116 - 2506473; E-mail:[email protected].
F.J. Clough
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UK
E.M.S. Narayanan
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UK
R. Cross
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UK
Get access

Abstract

The floating body induced transient characteristics in polycrystalline silicon TFTs is reported. An obvious current surge, arising from the floating body effect, is observed. Using a 2D numerical simulator and comparisons to SIMOX FETs, the insight into the mechanisms governing the experimentally observed switching behavior of poly-Si devices is obtained. It is found that the defect states in poly-Si cause the current surge and exert an effect equivalent to doping in SIMOX FETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A28.4
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Shin, H.C., Lim, Ik-Sung, Racanelli, Marco, Huang, Wen-Ling Margaret, Foerstner, Juergen and Hwang, Bor-Yuan, IEEE Transaction on Electron Devices, vol.43, No.2, 1996, pp.318–325 Google Scholar
[2] Clough, F.J., Chen, Y., Narayanan, E.M. Sankara, Eccleston, W. and Milne, W.I., Applied Physics Letters, Vol.71 (1997) pp.2002–2004 Google Scholar
[3]Xu, Y.Z., Clough, F.J., Sankara, E.M.S., Chen, Y. and Miln, W. I., IEDM'98. pp.273–276 Google Scholar
[4]‘TMA MEDICI 4.0 and Trapped Charge AAM’, Technology Modelling Associates Inc. Palo Alto, USAGoogle Scholar