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Fabrication of Location-Controlled Silicon Crystal Grains by Combining Excimer Laser Irradiation with Nanometer-sized A-Si

Published online by Cambridge University Press:  01 February 2011

Chun-Chien Tsai ,
Ting-Kuo Chang ,
Hsiu-Hsin Chen ,
Bo-Ting Chen  and
Huang-Chung Cheng
Chun-Chien Tsai
Affiliation:
[email protected], Electronics, Electronics Engineering, 1001 Ta Hsueh Rd., Hsinchu, 300, Taiwan R.O.C., Hsinchu, N/A, 300, Taiwan
Ting-Kuo Chang
Affiliation:
[email protected], Toppoly Optoelectronics Corporation, Miao-Li, N/A, N/A, Taiwan
Hsiu-Hsin Chen
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001 Ta Hsueh Rd, Hsinchu, N/A, 300, Taiwan
Bo-Ting Chen
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001 Ta Hsueh Rd, Hsinchu, N/A, 300, Taiwan
Huang-Chung Cheng
Affiliation:
[email protected], National Chiao Tung University, Electronics Engineering, 1001 Ta Hsueh Rd, Hsinchu, N/A, 300, Taiwan
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Abstract

In this paper, location-controlled Silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-μm-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm2/Vs can be fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated Silicon grains are essential to high performance and good uniformity thin film transistors.

Keywords

amorphousSiannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-08
Copyright
Copyright © Materials Research Society 2006

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