Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T18:06:16.144Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Test Condition, Microstructure and Linewidth on Electromigration Void Morphology

Published online by Cambridge University Press:  15 February 2011

S. Bauguess ,
M. L. Dreyer ,
M. Tucker ,
D. Theodore ,
C. T. Lee  and
S. Edwards
S. Bauguess
Affiliation:
Motorola, Semiconductor Products Sector 2200 W. Broadway Road, Mesa AZ 85257 M/S M350
M. L. Dreyer
Affiliation:
Motorola, Semiconductor Products Sector 2200 W. Broadway Road, Mesa AZ 85257 M/S M350
M. Tucker
Affiliation:
Motorola, Semiconductor Products Sector 2200 W. Broadway Road, Mesa AZ 85257 M/S M350
D. Theodore
Affiliation:
Motorola, Semiconductor Products Sector 2200 W. Broadway Road, Mesa AZ 85257 M/S M350
C. T. Lee
Affiliation:
Motorola, Semiconductor Products Sector 2200 W. Broadway Road, Mesa AZ 85257 M/S M350
S. Edwards
Affiliation:
Motorola, Semiconductor Products Sector 2200 W. Broadway Road, Mesa AZ 85257 M/S M350
Get access

Abstract

In this paper, experimental results for electromigration void morphology and failure time distribution are presented as a function of test condition, grain size distribution and conductor linewidth. Unpassivated Al-Cu(1.5%)-Si(1.5%) conductors with linewidths in the range lum ≤W ≤l0μm were subjected to accelerated temperature stresses of T=150° C and 250°C and current stresses in the range j= 0.5-4X106 A-cm-2, for each temperature stress. Unlike previous reports, erosion-like voids dominated at all current densities and temperatures for both W/D50≤1 and W/D50 > 1. The void distribution within a line was strongly dependent on test conditions and linewidth. The critical current density was extracted from electromigration lifetimes measured as a function of current density. The results show that the linewidth dependence of electromigration lifetimes depend strongly on the Blech relation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 379
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Atakov, E.M., Clement, J.J., and Miner, B., IRPS, 213 (1994).Google Scholar
2 Artz, E., Kraft, O., and Mockl, U.E., MRS Symp Proc. 338, 397 (1994).Google Scholar
3 Sanchez, J., Kraft, O., and Artz, E., Appl. Phys. Lett. 61 (24), 3121 (1992).Google Scholar
4 Sanchez, J., McKnelly, L.T., and Morris, J.W., J. Appl. Phys. 72 (7), 3201 (1992).Google Scholar
5 Blech, LA., J. Appl. Phys. 47, 1203 (1976).Google Scholar
6 Schafft, H.A., IEEE Trans. Electr. Dev. 34, 664 (1987).Google Scholar
7 Marieb, T., Bravman, J.C., P.Flinn, , and Madden, M., MRS Symp. Proc., 338,409 (1994).Google Scholar
8 Mockl, U.E., Bauer, M., Kraft, O., Sanchez, J.E., and Artz, E., MRS Symp. Proc., 338, 373 (1994).Google Scholar
9 Greer, L., Symp. Micromech.s in Stressed Conductor Lines and Thin Films (MPI, Stuttgart) 1994.Google Scholar
10 Dreyer, M.L. and Young, D., Submitted to J. Appl. Phys.Google Scholar
11 Walton, D., Frost, H., and Thompson, C.V., MRS Symp. Proc. 225, 219 (1991).Google Scholar
12 This is not strictly true for single grain clusters, however, for the range of W/D50 used in this study the single grain cluster length decreases with decreasing W/D50.Google Scholar
13 Dreyer, M. L. and Theodore, D., Submitted to Appl. Phys. Lett.Google Scholar