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Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI Mosfets
Published online by Cambridge University Press: 21 February 2011
Abstract
A physical model that describes the steady-state current-voltage characteristics of field-effect transistors (MOSFETs) fabricated in (poly)silicon-on-insulator (SOI) is described. The model predicts that a single high-angle grain boundary, especially one traversing the channel near the drain, can control the conduction properties of the MOSFET for all (weak-to-strong) inversion conditions in all (linear-to-saturation) regions of operation.
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